KUET 2023 Question Paper M.Sc. Electronics

FOR KUET EXAM PREPARATION

KUET 2023
Question Paper · M.Sc.
Electronics
EXAM YEAR TYPE SUBJECT

KUET 2023 Question Paper M.Sc. Electronics

Notes · Sample Papers · Previous Year Papers · Mock Tests

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Sr. No. .............................

ENTRANCE TEST-2023
SCHOOL OF APPLIED SCIENCES AND TECHNOLOGY

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ELECTRONICS
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Question Booklet Series
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Total Questions : 60

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Time Allowed : 70 Minutes Roll No. :

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g l a Test Roll Number in the space provided at the top of this page of Question a
Instructions for Candidates :

a necessary information in the spaces provided on the OMR Answer Sheet.
1. Write your Entrance Booklet and
fill up the
2. OMR Answer Sheet has an Original Copy and a Candidate’s Copy glued beneath it at the top. While making
entries in the Original Copy, candidate should ensure that the two copies are aligned properly so that the
entries made in the Original Copy against each item are exactly copied in the Candidate’s Copy.
3. All entries in the OMR Answer Sheet, including answers to questions, are to be recorded in the Original Copy
only.

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4. Choose the correct / most appropriate response for each question among the options A, B, C and D and
darken the circle of the appropriate response completely. The incomplete darkened circle is not correctly

mcircle of correct/most appropriate response. In no case
read by the OMR Scanner and no complaint to this effect shall be entertained.

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5. Use only blue/black ball point pen to darken the

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6. Do not darken more than one circle ofaoptions for any question. A question with more than one darkened
gel/ink pen or pencil should be used.

response shall be considered wrong.
7. There will be ‘Negative Marking’ for wrong answers. Each wrong answer will lead to the deduction of
0.25 marks from the total score of the candidate.
8. Only those candidates who would obtain positive score in Entrance Test Examination shall be eligible for
admission.

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9. Do not make any stray mark on the OMR sheet.

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10. Calculators and mobiles shall not be permitted inside the examination hall.

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em12. OMR Answer Sheet must be handled carefully and it should not be folded gorlmutilated
a in which case it will not
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11. Rough work, if any, should be done on the blank sheets provided with the question

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13. Ensure that your OMR Answer Sheet has been signed by the Invigilator and the candidate himself/herself.
14. At the end of the examination, hand over the OMR Answer Sheet to the invigilator who will first tear off the
original OMR sheet in presence of the Candidate and hand over the Candidate’s Copy to the candidate.

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1. A coil of inductance L=5.00 μ H and a capacitor of 5. When R = 0 in a series RLC circuit, but the net
capacitance C=200 pF is connected in series. reactance is not zero, the impedance vector
Suppose the frequency is f = 4.00 MHz. What is the (A) always points straight up.
net reactance? (B) always points straight down.
(A) -j 73 (C) always points straight toward the right.
(B) j 73 (D) None of the above is correct.
(C) -j 199 6. A Zener diode would most likely be found in
(D) -j 126 (A) the mixer in a super heterodyne receiver.
2. The complex admittance of a certain parallel circuit is (B) the PLL in a circuit for detecting FM.
0.010 - j0.0050. What is the complex impedance of
(C) the product detector in a receiver for SSB.
this same circuit, assuming the frequency does not
(D) the voltage regulator in a power supply.
change?
7. A diode can be used as a frequency multiplier because
(A) 80 + j 20
of its
(B) 80 + j 40
(A) junction capacitance.
(C) 40 + j 40
(B) nonlinearity.
(D) 80 - j 40
(C) avalanche voltage.
3. Which of the following is not a characteristic of an
(D) forward break over.
independent voltage source?
8. Correct answer from these points:
(A) voltage independent of magnitude of current
drawn a. tunnel diode used for high frequency switching
operations.
(B) voltage dependent on magnitude of current
drawn b. tunnel diode uses a high doping level to provide
a narrow junction.
(C) independent of direction of current flow
(A) True, False
(D) can supply or receive uninterrupted energy at
constant voltage (B) False, False

4. A practical voltage source can be represented by (C) True, True

(A) an ideal voltage source with its internal resistance (D) False, True
connected in series 9. The following is a negative differential resistance diode:
(B) an ideal voltage source with its internal resistance (A) PN Junction diode
connected across its terminals (B) Zener diode
(C) by neglecting the internal resistance (C) Tunnel diode
(D) none of these (D) Schottky diode

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An FET amplifier is 60 percent efficient. If the power
as the semiconductor material in junction field-effect output is 3.5 W, what is the dc drain power input ?
transistors (JFETs) ?
(A) 5.8 W
(A) Gallium arsenide
(B) Mica (B) 4.0 W
(C) Glass (C) 8.8 W

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(D) Polystyrene (D) 7.0 W

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11. A common-collector transistor circuit is often used : 17.

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What is the binary equivalent of decimal 29 ?

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(A) to provide high gain and sensitivity over a wide

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(A) 10101

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range of frequencies.

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(B) to match a high impedance to a low impedance. (B) 11101
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(C) as a high-fidelity audio power amplifier. (C) 10111
(D) as an oscillator at microwave frequencies. (D) 11011
12. Suppose a bipolar-transistor amplifier has a dc 18. The time period of a monostable 555 multivibrator :
collector input of 115 W and an ac power output of
65.0 W. What is the efficiency in percent ? (A) RC
(A) 50 % (B) 3RC
(B) 5.6 % (C) 1.1RC

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(C) 5 %

c. oAn audio amplifier is an example of ............
(D) 0.33 RC
(D) 56.5 %

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13. A twin T oscillator is commonly used for generating
(A) AF signals.
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(B) High-frequency RF signals. (B) Linear IC
(C) Microwave RF signals. (C) Both digital and linear IC
(D) Powerful bursts of RF energy. (D) None of the above
14. A circuit has a rms ac input voltage of 24.2 V and a 20. In voltage follower circuit the input and output voltages
rms ac output voltage of 19.9 V. What is the gain in are :
decibels?
(A) 1.7 dB (A) Vin=2V and Vout = 3V

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(B) Vin=10V and Vout= 11V
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(B) -1.7dB

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(C) 0.0849 dB (C) Vin =9V and Vout = 9V
(D) V =4V and V = m
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(D) 20 dB

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15. The frequency at which a quartz crystal oscillator 21.

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CMRR value of an ideal

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produces energy is largely dependent on :

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(A) 1
(A) the load impedance.
(B) the physical thickness of the quartz wafer. (B) 0
(C) the amount of resistance through the crystal. (C) Infinity
(D) the power-supply voltage. (D) 0.5

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22. Inverters are placed in series with both inputs of an 27. If you see a number represented by FF in the
AND gate. Under what conditions is the output of documentation for an electronic circuit or system, you
the resulting black box high ? can be certain that the number is
(A) If and only if both inverter inputs are high (A) radix 16.

(B) If and only if both inverter inputs are low (B) radix 10.
(C) radix 8.
(C) If and only if one inverter input is high and the
other is low (D) radix 2.

(D) Under no conditions (the output is always low) 28. A binary digital black box with two inputs, called
X and Y and an output Z. If X = 0 and Y = 1, then
23. What is the octal equivalent of binary 1010 ?
Z = 0. In all other instances, Z = 1. Which of the
(A) 4 following logical expressions represents the contents
(B) 10 of the black box ?
(C) 12 (A) X + (–Y)
(D) There is no way to tell without more information. (B) X * (–Y)
24. What is the largest possible radix 10 number that can (C) X – (*Y)
be represented as a six-digit binary number ? (D) X = (–Y)
(A) Decimal 256 29. Suppose a logic circuit has four inputs W, X, Y, and
(B) Decimal 128 Z. How many possible input combinations are
there ?
(C) Decimal 64
(A) 4
(D) Decimal 63
(B) 8
25. Frequency deviation in FM is :
(C) 16
(A) Change in carrier frequency to the frequency
(D) 32
above and below the centre frequency
30. What can be done to minimize the capacitance of the
(B) Formation of side bands
P-N junction in a semiconductor diode, thereby
(C) The variation of the instantaneous carrier making the component effective as a high­speed RF
frequency in proportion to the modulating signal switch ?
(D) All of the above (A) The surface area of the P-N junction can be
26. DeMorgan’s Theorem states that, for all logical maximized.
statements X and Y, where _____ is complement. (B) A layer of intrinsic semiconductor can be
(A) – (X*Y) = X+Y placed between the P- and N-type materials.
(C) The frequency of the applied signal can be made
(B) X*Y = – (X+Y)
as high as possible.
(C) (–X) + (–Y) = X*Y
(D) The diode can be forward- biased with a high
(D) (–X) + (–Y) = – (X*Y) voltage.

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37. A continuously variable signal can be recovered from
(A) Band pass filter a signal having only a few discrete levels or states by
(B) Band stop filter means of :
(C) Low pass filter (A) a ratio detector.
(D) High pass filter (B) a D/A converter.
32. What is the wavelength if the frequency is 4MHz ?

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(C) a product detector.

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(A) 75 meters

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(D) an envelope detector.

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(B) 75 km

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38. An AM super heterodyne receiver with IF of 455

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(C) 75 cm

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kHz is tuned to the carrier frequency of 1000 kHz.

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(D) 75 mm

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The image frequency is :

of wirelessatransmission. It is proportional to the :
33. Signal attenuation, or degradation, exists in all media
(A) 545 kHz

(A) the distance between the transmitter and receiver (B) 1 MHz
(B) difference of the distance between the transmitter (C) 1455 kHz
and receiver (D) 1910 kHz
(C) square of the distance between the transmitter 39. In FM signal with a modulation index mf is passed
and receiver
through a frequency Tripler. The wave in the output

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(D) summation of the distance between the of the Tripler will have a modulation index of :
transmitter and receiver

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34. TCP stands for :
(A) Transmission Control Protocol
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(B) Transmission Capture Protocol (C) mf/3
(C) Transmission Control Procedure (D) mf/9
(D) Transistor Capacitor Power 40. The maximum power efficiency of an AM modulator
35. A receiver that responds to a desired signal, but not is :
to another signal very close by in frequency, has good (A) 25%
(A) Sensitivity. (B) 33%

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(B) Noise figure.

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(C) 50%

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(C) Dynamic range.

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(D) 100%

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(D) Selectivity.

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41. Which of the following modes is used to send image

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36. The domain name system (DNS) is chiefly used to

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translate hostnames into : data over telephone lines ?

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(B) Numeric IP addresses
(A) On/off keying
(B) Fax
(C) Analog address (C) AM
(D) All of the above (D) Product detection

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42. READY signal used in an intel 8085 microprocessor 47. Which one is not correct in 8085 microprocessors ?
is :
(A) RAC Rotate the accumulator to Carry. Bit 0
(A) To indicate to user that the microprocessor is
goes to bit 7 AND the Carry flag
working and is ready for use.
(B) RAR Rotate the accumulator right through the
(B) To provide proper WAIT states when the
microprocessor is communicating with a slow carry. Bit 0 goes to the Carry and carry goes
peripheral device. to bit 7.
(C) To slow down a fast peripheral device so as to (C) RLC Rotate the accumulator left. Bit 7 goes to
communicate at the microprocessor’s device. bit 0 and the carry flag.
(D) None of the above.
(D) RAL Rotate the accumulator left through the
43. The 8085 has six general-purpose registers to store
carry. Bit 7 goes to the carry and carry goes to
8-bit data; these are identified as :
bit 0.
(A) A, C, D, E, H, and L
48. The 8085 has 16 address lines. So, it can address a
(B) B, C, D, E, H, and I
total of memory locations :
(C) B, C, D, E, H, and L
(D) B, C, D, E, F, and L (A) 65K

44. The ALU includes five flip- flops, which are set (B) 64K
or reset after an operation according to data (C) 128K
conditions of the result in the accumulator and other
(D) 16K
registers. These flags are :
(A) Z, CY, S, P and AC 49. The 8051 is an :

(B) A, CY, S, P and AC (A) 8-bit microcontroller with 8-bit data bus and
(C) F, CY, S, P and C 16-bit address bus.
(D) W, CY, S, P and A (B) 16-bit microcontroller with 16-bit data bus and
45. Immediate addressing in 8085 example is : 16-bit address bus.
(A) MVI data, R (C) 16-bit microcontroller with 8-bit data bus and
(B) MVI R, data 8-bit address bus.
(C) MOV R, data (D) 8-bit microcontroller with 8-bit data bus and
(D) MOVE R, data 8-bit address bus.
46. Trap interrupt is a non-maskable restart interrupt; it
50. The 8051 has :
has the priority of any interrupt.
(A) 3 internal interrupts, 3 external interrupts.
(A) Lowest
(B) Medium (B) 4 internal interrupts, 2 external interrupts.
(C) Less (C) 2 internal interrupts, 2 external interrupts.
(D) Highest (D) 3 internal interrupts, 2 external interrupts.

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51. The interrupt has highest priority in 8051 56. Integrating instruments among the following is :
microcontrollers : (A) Ammeters
(A) IE0 (B) Voltmeters
(B) TF0 (C) Wattmeter
(C) IE1 (D) Watt-hour meters

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(D) TF1

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57. In an enhancement-mode MOSFET,

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52. In addressing of 8051 The storage of addresses that

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(A) the channel conducts fully with zero gate bias.

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can be directly accessed is :
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(B) the channel conducts partially with zero gate

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(A) external data RAM

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bias.

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(B) internal data ROM (C) the channel conducts ac but not dc.
(C) internal data (D) the channel does not conduct with zero gate bias.
(D) external data ROM and SFRS 58. The high input impedance of a MOSFET makes this
53. For measuring a very high resistance we should use : type of device ideal for use in
(A) Kelvin’s double bridge (A) weak-signal amplifiers.
(B) Wheatstone bridge (B) high-power oscillators.

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(C) Meggar (C) high-current rectifiers.

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59.. A significant difference between MOSFETs and
(D) None of the above (D)

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54. An ammeter shunt is useful because :

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(A) It increases meter sensitivity.
(B) It makes a meter more physically rugged. (A) MOSFETs can handle a wider range of gate
(C) It allows for measurement of a wide range of bias voltages.
currents. (B) MOSFETs can deliver greater output power.
(D) It prevents overheating of the meter. (C) MOSFETs are more rugged.
55. The main advantage of a FETVM over a conventional (D) MOSFETs last longer.
voltmeter is the fact that the FETVM : 60. An optocoupler consists of :

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(A) Can measure lower voltages. (A) two Zener diodes back-to- back.
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(B) Draws less current from the circuit under test. (B) an LED and a photodiode.

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(C) two NPN transistors in series.

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(D) an NPN transistor followed by a PNP transistor.

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ROUGH WORK

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